GGrantIndex
← Leaderboards

Zhaoyang Fan

Iii-N Technology, Inc

$2,832,202
Attributed
$3,916,404
Total exposure
12
Grants
10
Lead (contact PI)

Attributed= this PI's even-split share of every grant they're on (the fair, additive number). Exposure = full size of all those grants.

Funding over time

peak $649.8K · FY200521
$1M$750K$500K$250K$0
'05
'06
'07
'08
'09
'10
'11
'12
'13
'14
'15
'16
'17
'18
'19
'20
'21

Funding mix

By agency

NSF$3,916,404 · 12

By mechanism

$3,916,404 · 12

Top collaborators

Grant awards (12)

Collaborative Research: Promoting Lithium Sulfides Redox Cycle via Atomically Dispersed Active Sites for Batteries$349,777
· FY2021 · ENG · contact PI
PFI-TT: Ultrafast Electrochemical Capacitors for Electronic and Energy Applications$299,999
· FY2021 · TIP · contact PI
Manufacturing of High-Performance Lithium-Sulfur Batteries Using Microbial Nanomachines$287,891
· FY2020 · ENG · contact PI
Manufacturing of High-Performance Lithium-Sulfur Batteries Using Microbial Nanomachines$380,971
· FY2019 · ENG · contact PI
STTR Phase I: AC-Supercapacitors for Power Applications$225,000
· FY2018 · TIP
I-Corps: Supercapacitors for Energy Applications$50,000
· FY2017 · TIP · contact PI
High density capacitors: bridging the performance gap between conventional capacitors and electric double layer capacitors$355,573
· FY2016 · ENG · contact PI
Organometal Halide Perovskites: Sequential Vapor Deposition And Device Study Toward Highly Efficient Thin-Film Solar Cells$345,000
· FY2014 · ENG · contact PI
Electrically Controlled Metal-Insulator Transition and Its Terahertz Applications$396,001
· FY2011 · ENG · contact PI
MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education$646,520
· FY2009 · ENG
SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors$479,672
· FY2005 · TIP · contact PI
SBIR Phase I: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors$100,000
· FY2004 · TIP · contact PI