← Leaderboards
Mark W Holtz
Texas Tech University
$1,739,608
Attributed
$7,360,375
Total exposure
13
Grants
3
Lead (contact PI)
Attributed= this PI's even-split share of every grant they're on (the fair, additive number). Exposure = full size of all those grants.
Funding over time
peak $1M · FY2006–24$2M$1.5M$1M$500K$0
'06
'07
'08
'09
'10
'11
'12
'13
'14
'15
'16
'17
'18
'19
'20
'21
'22
'23
'24
Funding mix
By agency
NSF$7,360,375 · 13
By mechanism
—$7,360,375 · 13
Top collaborators
- Henryk Temkin7 shared
- Jordan M Berg6 shared
- Sergey Nikishin4 shared
- Ayrton A Bernussi3 shared
- Richard O Gale3 shared
- Latika Menon2 shared
- Shubhra Gangopadhyay2 shared
- Zhaoyang Fan2 shared
Grant awards (13)
Equipment: MRI: Track 1 Acquistion of state-of-the-art lithography system for micro/nanometer scale device fabrication in research and education$569,780
· FY2024 · MPS
Integrated Selective Growth of Diamond and GaN for Maximum Heat Extraction from Electronic Devices$410,000
· FY2018 · ENG
Electrically Controlled Metal-Insulator Transition and Its Terahertz Applications$396,001
· FY2011 · ENG
MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education$646,520
· FY2009 · ENG
MRI: Development of an In Situ High-Pressure High-Temperature Raman Scattering System: Research and Education$433,872
· FY2007 · MPS
ANN NIRT: GOALI : Nano-Engineering Efficient Optoelectronic Devices$1,037,900
· FY2006 · ENG
MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis$230,000
· FY2004 · ENG · contact PI
NIRT: Nano-Arrays of Large Bandgap Semiconductors for Light Emitting and Spintronic Devices$1,212,000
· FY2003 · ENG
Device Processing Studies of Aluminum-Rich AlGaN Superlattices$425,999
· FY2003 · ENG · contact PI
MRI: Scanning Electron Microscopy - Research And Education In Advanced Materials And Devices$150,000
· FY2003 · ENG
NIRT: Nanocomposite Reactions in the Self-propagating High Temperature Synthesis of Materials$999,309
· FY2002 · ENG
GOALI: Nonlinear Control of an Electrostatically-Actuated Spatial Light Modulator$587,000
· FY2002 · ENG
Fundamental Properties of GaAsN and InGaAsN - Toward Optoelectronic Applications$261,994
· FY2000 · ENG · contact PI