← LeaderboardsInvestigatorsiAttributed = a PI's even-split share of each grant — a $1M grant with 2 PIs counts $500K each.
Adroit Materials, Inc.
$4,747,120
Total funding
6
Grants
Funding over time
peak $2.2M · FY2014–23$2.5M$1.9M$1.3M$625K$0
'14
'15
'16
'17
'18
'19
'20
'21
'22
'23
Funding mix
By agency
DOE$4,747,120 · 6
By mechanism
—$4,747,120 · 6
Investigators at Adroit Materials, Inc.
InvestigatorsiAttributed = a PI's even-split share of each grant — a $1M grant with 2 PIs counts $500K each.
Exposure= the full size of every grant they're on ($1M each).
Rising Stars
First grant in the last 5 yrs
Not enough data
Emerging Leaders
6–10 yrs in
Not enough data
All-Time
Most funded here, all years
Not enough data
Largest grants
CONTROL NUMBER 1691-1526 PNDIODES
ADROIT MATERIALS, INC.
TITLE: SELECTIVE AREA DOPING FOR NITRIDE POWER DEVICES
THIS AWARD WILL DEVELOP A PATHWAY FOR THE REALIZATION OF PLANAR AND EMBEDDED P-N JUNCTIONS AND HIGH POWER DEVICES BASED ON THESE JUNCTIONS, SUCH AS VERTICAL JFETS AND CAVETS.$2,247,120
· FY2017 · Department of Energy
ION IMPLEMENTATION PROCESSES IN AIN FOR WORLDWIDE BANDGAP SEMICONDUCTOR POWER DEVICES$1,150,000
· FY2014 · Department of Energy
CONTROL #:1954-1788
NEW TINA SBIR TOPIC T:SEED AWARD TO ADROIT MATERIALS, INC.
PROJECT TITLE: ION IMPLANTATION-ENABLED FABRICATION OF ALN BASED SCHOTTKY DIODES$500,000
· FY2021 · Department of Energy
ADROIT MATERIALS, INC.
CONTROL #1954-1787, TINA SEED SBIR/STTR
PROJECT TITLE: KV-CLASS GAN-BASED JUNCTION BARRIER SCHOTTKY DIODES USING ION IMPLANTATION$500,000
· FY2021 · Department of Energy
1.2 KV CLASS GAN ON GAN VERTICAL U-MOSFET WITH REACH THROUGH PROTECTION AND SHIELDING BY MG IMPLANTATION$200,000
· FY2023 · Department of Energy
DEVELOPING EPI-READY GALLIUM NITRIDE WAFER SURFACES$150,000
· FY2015 · Department of Energy