← LeaderboardsInvestigatorsiAttributed = a PI's even-split share of each grant — a $1M grant with 2 PIs counts $500K each.
Sensor Electronic Technology, Inc.
Columbia, SC
$16,813,821
Total funding
15
Grants
Funding over time
peak $13.4M · FY2005–16$20M$15M$10M$5M$0
'05
'06
'07
'08
'09
'10
'11
'12
'13
'14
'15
'16
Funding mix
By agency
DOD$13,251,823 · 3
NSF$3,561,998 · 12
By mechanism
—$16,813,821 · 15
Investigators at Sensor Electronic Technology, Inc.
InvestigatorsiAttributed = a PI's even-split share of each grant — a $1M grant with 2 PIs counts $500K each.
Exposure= the full size of every grant they're on ($1M each).
Rising Stars
First grant in the last 5 yrs
Not enough data
Emerging Leaders
6–10 yrs in
Not enough data
All-Time
Most funded here, all years
Not enough data
Largest grants
DEVELOPMENT OF 270-280MM DEE ULTRAVIOLET LEDS$11,700,334
· FY2010 · Department of the Army
DEVELOPMENT OF 230-235 DEEP ULTRAVIOLET LEDS$1,526,613
· FY2008 · Department of the Army
SBIR Phase II: High Power Deep UV LED-Based Lamps$1,129,028
· FY2006 · TIP
SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control$1,034,727
· FY2010 · TIP
SBIR Phase II: UV LED Lamp Based Water Disinfection for POU Compact Purification Systems$475,227
· FY2010 · TIP
SBIR Phase I: Development of UV-B SLED and LD$149,951
· FY2010 · TIP
SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control$137,331
· FY2009 · TIP
SBIR Phase I: UV LED Based Water/Wastewater Point-of-Use Purification System$99,976
· FY2006 · TIP
SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor$99,962
· FY2006 · TIP
SBIR PHASE I: High Power Deep UV LED-Based Lamps$99,904
· FY2005 · TIP
SBIR Phase I: Hybrid Precursor HVPE Growth of AlGaN$99,768
· FY2007 · TIP
SBIR Phase I: UV LED Lamp Based Water Disinfection for POU Compact Purification Systems$99,499
· FY2009 · TIP
SBIR Phase I: High quality AlGaN layers by fast growth rate MEMOCVD$99,364
· FY2009 · TIP
SBIR Phase IB: High quality AlGaN layers by fast growth rate MEMOCVD$37,261
· FY2010 · TIP
III-NITRIDE SEMICONDUCTOR BASED BETAPHOTOVOLTAIC$24,876
· FY2016 · Department of Defense