THE OBJECTIVES OF THIS PROJECT ARE TO 1) IMPROVE THE YIELD OF SINGLE WALLED CARBON NANOTUBES (CNTS) WITH INCREASED RATIO OF SEMICONDUCTING TO METALLIC CNTS WHILE MAINTAINING THE ALREADY DEMONSTRATED CNT DIAMETER CONTROL, LENGTH, DENSITY AND CLEANLINESS; 2) DEVELOP VOLUME MANUFACTURABLE CNT DIELECTRIC (COATING) THAT SWITCHES SEMICONDUCTING CNTS “ON” BETWEEN THE GATE (INPUT) ELECTRODE AND THE SOURCE AND DRAIN ELECTRODES THAT SUPPLY CURRENT; 3) USE THE IMPROVED CNTS AND DIELECTRIC TO FABRICATE FIELD EFFECT TRANSISTORS (FETS, CNTFETS) SUITABLE FOR RADIO FREQUENCY (RF) APPLICATIONS; 4) DEMONSTRATE RF PERFORMANCE WITH CURRENT GAIN (FT) AT GREATER THAN 50 GHZ; AND 5) IMPROVE RF AMPLIFIER DATA TRANSMISSION EFFICIENCY BY 10X.