BIL SINGLE CRYSTAL SILICON INGOT GROWTH USING CONTINUOUS CZOCHRALSKI METHOD: THE PROJECT GOAL IS TO COMMERCIALIZE A U.S. SUPPLY OF 300 MM DIAMETER HIGH-QUALITY SINGLE CRYSTAL SILICON INGOT FOR THE SI PV INDUSTRY. DEMONSTRATION OF THIS OBJECTIVE WILL BE TO CONSTRUCT A PILOT MANUFACTURING FACILITY UTILIZING THE CONTINUOUS CZOCHRALSKI (CCZ) AND EVALUATE THE QUALITY OF THE SI WAFERS AND PROCESS. THE EXPECTED PROJECT OUTCOME IS TO SECURE A ROBUST DOMESTIC MANUFACTURING CAPABILITY WITH EQUAL OR GREATER QUALITY AS COMPARED TO THE CURRENT PV CRYSTAL PRODUCTS IMPORTED FROM ASIA.
$0FY2025Department of EnergyDOE
Ubiquity Solar Si-Pv Division Inc.