GANIFY LLC NEW SBIR/STTR AWARD UNDER DE-FOA-0001954 (SEED) WITH PROJECT TITLE, ''HIGH-PERFORMANCE AND MANUFACTURABLE MEDIUM VOLTAGE POWER DIODES.” GANIFY LLC WILL DEVELOP 10-KV/10-A POWER DIODE PROTOTYPES FOR MEDIUM-VOLTAGE POWER ELECTRONICS SYSTEMS. THE MEDIUM-VOLTAGE POWER DIODES ARE BASED ON A NOVEL CHARGE-BALANCED GAN SUPER-HETEROJUNCTION TECHNOLOGY, WHICH ALREADY DEMONSTRATED ~2X HIGHER EFFECTIVE E-FIELD, SCALABILITY TO OVER 10 KV, AND ~3X LOWER ON-RESISTANCE OVER THE EXISTING WIDE BANDGAP SEMICONDUCTOR TECHNOLOGY.

$500,000FY2022Department of EnergyDOE

Ganify, Inc.

Investigators

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GANIFY LLC NEW SBIR/STTR AWARD UNDER DE-FOA-0001954 (SEED) WITH PROJECT TITLE, ''HIGH-PERFORMANCE AND MANUFACTURABLE MEDIUM VOLTAGE POWER DIODES.” GANIFY LLC WILL DEVELOP 10-KV/10-A POWER DIODE PROTOTYPES FOR MEDIUM-VOLTAGE POWER ELECTRONICS SYSTEMS. THE MEDIUM-VOLTAGE POWER DIODES ARE BASED ON A NOVEL CHARGE-BALANCED GAN SUPER-HETEROJUNCTION TECHNOLOGY, WHICH ALREADY DEMONSTRATED ~2X HIGHER EFFECTIVE E-FIELD, SCALABILITY TO OVER 10 KV, AND ~3X LOWER ON-RESISTANCE OVER THE EXISTING WIDE BANDGAP SEMICONDUCTOR TECHNOLOGY. · GrantIndex