THE RESEARCH FOUNDATION FOR STATE UNIVERSITY OF NEW YORK, ON BEHALF OF SUNY POLYTECHNIC INSTITUTE: NEW PNDIODES AWARD. CONTROL NUMBER: 1691-1517 TITLE: ''DEMONSTRATION OF PN-JUNCTIONS BY ION IMPLANTATION TECHNIQUES FOR GAN (DOPING-GAN)'' SUNY POLYTECHNIC INSTITUTE PROPOSES DOPING-GAN (DEMONSTRATION OF PN-JUNCTIONS BY IMPLANT OR GROWTH FOR GAN), WHICH AIMS TO DEVELOP ENABLING PROCESS TECHNOLOGIES FOR GAN VERTICAL POWER DEVICES. THE SUCCESSFUL COMPLETION OF THE PROPOSED DOPING-GAN RESEARCH WILL ENABLE THE PRODUCTION OF GAN POWER DEVICES THAT WILL HAVE BETTER PROPERTIES WITH COMPARABLE COSTS THAN THE CURRENT SILICON AND SIC POWER DEVICES BEING USED. ----------