US-Ireland collaborative research on Future Oxides and Channel materials for Ultimate Scaling (FOCUS)

University Of Texas At Dallas, Richardson TX

Investigators

Abstract

Abstract: Proposal #0925844 Robert M. Wallace, University of Texas at Dallas "This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)" An international collaboration project ?Future Oxides and Channel materials for Ultimate Scaling (FOCUS)? between US, Ireland and Northern Ireland investigators is established. The project will investigate the chemical, structural, and electrical properties of advanced materials for high performance integrated circuits. The project will employ the unique expertise and capabilities of researchers at Dublin City University (DCU), Queen?s University Belfast (QUB), the Tyndall National Institute at University College Cork (Tyndall), and the University of Texas at Dallas (UTD). The research focuses on the heart of advanced, high performance integrated circuits ? the transistor gate stack ? and examines the fundamental impact of three key device components: (1) surface passivation, (2) fabrication of Ge and III-V high-k MOS gate stacks, and (3) carrier mobility measurements in Ge and III-V surface channel MOSFETs. The investigators will examine high-Z chalcogenides (Se and Te) using a combination of unique, state-of-the-art in-situ and ex-situ characterization techniques, resulting in a fundamental understanding of the device surfaces and interfaces at the sub-nanometer scale. In addition to physicochemical investigations of these passivated surfaces, the performance for device applications will be evaluated electrically through the fabrication of capacitor and transistor devices. These investigators will also contribute to various activities aimed at articulating the excitement of the research to students in the science and technology pipeline.