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ARI-SA: Boron-rich semiconductors for neutron detectors

$134,565FY2007ENGNSF

Kansas State University, Manhattan KS

Investigators

Abstract

0736154 Edgar This research is to improve production of large Boron-Phosphorous and Boron-Arsenic crystals and study their charge transport properties, composition, crystal structure and to quantify the number and type of defects in the crystal structure. This work will advance the U.S. capability in production and characterization of large crystals for semi-conductor fabrication and provide a sensitive detector for thermal neutrons.

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ARI-SA: Boron-rich semiconductors for neutron detectors · GrantIndex