III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications

Kansas State University, Manhattan KS

Investigators

Abstract

This project represents a multifaceted approach to carry out fundamental research needed to further advance the science and technology of semiconductor deep UV (DUV) photonics. One of the major objectives is to identify and understand fundamental mechanisms associated with epitaxial growth and doping of Al-rich AlGaN alloys and AlN. In particular, mechanisms for the formation of native defects during crystal growth, which act as compensating centers, will be explored by employing a high quality AlN epilayer template, off-axis substrates, a pulsed growth scheme, and delta doping. Research activities and basic understanding on DUV photonic materials and devices based upon the Al-rich AlxGa1-xN alloy system are still in early stages. This research project strives for fundamental understanding of the AlGaN DUV photonic material system as well as addressing important applications. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having high technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Through direct involvement in research, students will have unique learning and discovery opportunities in the areas of advanced semiconductor materials, nano-fabrication techniques, semiconductor physics, semiconductor materials fabrication and device processing using state-of-the-art epitaxial growth, lithographic patterning, plasma etching, and advanced materials characterization. ***