In Situ Probing of Atomic Layer Deposition: Surface Chemistry, Film Growth and Electrical Properties

University Of Colorado At Boulder, Boulder CO

Investigators

Abstract

Abstract CHE-0408554 George/Colorado This research project, supported by the Analytical and Surface Chemistry Program, addresses the fundamental aspects of atomic layer deposition chemistry of SiO2 and SnO2 layers. Using a novel viscous flow reactor coupled with multiple surface analysis probes, Professor George and his collaborators at the University of Colorado, are investigating the detailed mechanisms of these important processes. The combination of infrared spectroscopy, electrical measurements, quartz crystal microgravimetry, and gas phase reactant and product analysis provides an effective tool for determining surface reaction kinetics and mechanisms. Results of this work will find application in electronic materials processing and in the development of new gas sensor systems. Using a combination of surface spectroscopic probes, Professor George and his coworkers are examining the detailed mechanistic chemistry of atomic layer deposition (ALD). This work concentrates primarily on the deposition of semiconductor and metal oxide layers using ALD. The results of this work are applied to the design of semiconductor process chemistry, and to the fabrication of gas sensor devices.