SBIR Phase I: Ultra Low k Silicon Dioxide Film for Inter-Metal Dielectrics (IMDs) Application

Chemat Technology Inc, Northridge CA

Investigators

Abstract

This Small Business Innovation Research Phase I project will fabricate low dielectric constant materials by using stepwise coupling polymerization process. Low dielectric constant materials play a key role in the future semiconductor manufacture of low-k dielectric materials as inter-metal dielectrics (IMDs). IMDs will increase chip speed by reducing RC time delays. Currently, organic polymers (e.g. polyamides) and silica have been investigated and the feasibility to be used as IMDs has been demonstrated. The approach will to make nano-porous silicon dioxide by preparing reactive ladder-like polysilsesquioxane (LPS) and introducing nanometer size pores before converting it into silicon dioxide with low thermal expansion, low density, high thermal stability and good mechanical property. The objective will be to make an ultra low dielectric material with a constant k, 1.8~2.0. The broader impacts of this work will be to the semiconductor industry's roadmap. There is a need to develop materials with dielectric constants lower than that of silicon dioxide for inter-metal applications: lower dielectric constants mean lower capacitance and therefore shorter RCA delays, faster device speeds, less cross-talk and less power dissipation.