Modeling of Nanoscale MOSFETs

Arizona State University, Scottsdale AZ

Investigators

Abstract

The purpose of the proposed research effort is to develop methodology which allows simulation of effects playing an important role in nano-scale devices, within the framework of existing device simulators. The important underlying mechanisms are, on one hand, quantum effects such as tunneling and quantization, and, on the other hand, many-body effects, electron-ion interactions and single-dopant effects. The goal of the project is to include these effects into existing models and codes in such a way, that their influence on device performance is accurately represented, while simulations can be made at a computational cost comparable to that of existing particle-based device simulators. The basic approach to achieve this goal consists of the use of novel forms of effective quantum potentials and quantum versions of existing particle-based approaches to simulate short-range many-body interactions. Comparison will be made with experimental data provided by the Nanostructures Research Group at ASU, and Intel and Motorola. The calibrated tools can help device designers in fabricating optimal device structures with a reduced cost. The educational effort of this project will be closely tied to the proposed research activities. This will be accomplished via specially developed interdisciplinary courses in a classical as well as a distance learning format, and through the direct participation of students in the research project on the graduate as well as the undergraduate level. Course materials will be developed for this purpose and will be placed on the Computational Electronics Hub that is being developed as part of an existing NSF sponsored project.