NER: Synthesis of Boron Nitride Nanotubes for Nanoelectronics

University Of Cincinnati Main Campus, Cincinnati OH

Investigators

Abstract

ABSTRACT 0210283 Singh This proposal was received in response to the Nanoscale Science and Engineering Initiative, Program Solicitation NSF 01-157, in the NER category. The primary objective of this research is to develop a fundamental understanding for synthesizing/manufacturing boron nitride nanotubes (BN-NTs) predictably and reproducibly by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition (ECR-MPCVD). Pure BN nanotubes present an attractive opportunity for practical applications. They offer a unique combination of electrical and mechanical properties. Their predicted wide band-gap is independent of tube structure, which reveals BN-NTs potential for new generations of nanoelectronic devices based on field emission and cold cathode characteristics. This exploratory NER project will use ECR-MPECVD to synthesize BN-NTs. The unique features of this study will be to select novel metal-organic precursors, incorporate appropriate catalysts, and provide special surface pre-treatments to enhance formation and growth of single and multi-walled BN-NTs. In addition, in situ monitoring of plasma chemistry and processing parameters will be performed to relate to BN-NTs formation and growth. The proposed research will investigate two unique aspects: (1) Roles of the precursor chemistry on the synthesis of BN-NTs, and (2) Effects of substrate pretreatment such as surface modification by seeding and ion implantation on the BN-NTs formation and growth. In addition, influence of special catalysts such as Li3N and Mg3N2 on the synthesis of BN-NTs will be investigated. HRTEM, EELS, SEM, TED and possibly other analytical techniques will characterize the nanotubes. In addition, selected electrical properties of BN-NTs will be measured for applications in electronics. On a broader scale, a successful completion of this research will lead to a knowledge base for synthesizing BN-NTs with exceptional electrical, thermal, and mechanical properties for applications in electronics. It is expected that future generations of nanostructure electronic devices can be based on BN-NTs. For example, BN-NTs may serve as a perfect nano-insulating tubular shield for any conducting material encapsulated within. This offers the possibility of nanotube electrical transport tailored over a wide range. Unique field emission and cold cathode characteristics of BN-NTs have applications in flat panel display devices. Another important goal of this project is to train graduate student and research associate/post doc through participation on this research project and their MS and Ph.D. theses. In addition, minority/women high school and undergraduate students will also be mentored and exposed to this research.