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RUI: Issues in Ultra Thin Film Growth on Group IV Semiconductors

$469,164FY2002MPSNSF

Bradley University, Peoria IL

Investigators

Abstract

This RUI project is a collaborative study of two issues in growth of thin films on Group IV semi-conductor surfaces, i.e., on silicon and germanium. A team of four researchers at Bradley Univer-sity will address growth and characterization of ultra thin metallic films on silicon single crystal surfaces, and electron and photon assisted deposition of SiGe alloy films on Si(100) and Ge(100) surfaces under very low thermal budget conditions. Issues to be explored include electrical con-ductivity in ultra-thin metallic films on silicon as well as electromigration effects which may ac-company high current densities in such films. Also, fundamental issues of electron and photon driven processes in adsorbates which may serve as precursors to growth of SiGe alloy films will be studied. %%% The project addresses fundamental research issues in topical areas of materials science having technological relevance. Undergraduate students will play a primary role in the project, with op-portunities for research integrated directly into their academic program. The research program will provide access to state-of-the-art surface science equipment and unique opportunities for un-dergraduates to participate in and develop skills in exciting areas of materials science at the na-noscale level. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***

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RUI: Issues in Ultra Thin Film Growth on Group IV Semiconductors · GrantIndex