Microscopic Mechanisms of III-Nitride Growth

University Of Minnesota-Twin Cities, Minneapolis MN

Investigators

Abstract

This project strives for greater understanding of the primary microscopic processes involved in the growth of III-nitrides. The approach incorporated high temperature scanning tunneling microscopy, reflection high energy electron diffraction and desorption mass spectroscopy. A predictive growth model will be sought. Rate equation models and kinetic Monte Carlo models (in collaboration with others) will be developed. Important issues to be addressed will be the differences in polarity and structure of the GaN surfaces that can be used, the role of growth parameters, and the role of defects. Methods to exert microscopic control over the growth of III-nitrides will be investigated. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***