SBIR Phase II: Development of AlGaN Field Emission Cathodes

Uhv Technology, Inc., Fort Wayne IN

Investigators

Abstract

This Small Business Innovation Research Phase II project focuses on optimization and scale-up of an aluminum gallium nitride (AlGaN) field emitter technology that could be used for practical applications. Materials have been identified that are very promising to deal with the wide-band-gap for field-emission applications. These materials have low to negative electron affinity. The Phase I project demonstrated various AlGaN compositions that possessed different doping levels for field emission properties. The Phase II project will carry out a detailed and systematic parametric optimization using closely-coupled theoretical modeling and experimentation to produce rugged, low-voltage III-V nitride field emitters. The project will utilize the company's deposition chamber and will demonstrate the effects of composition, doping, ion implantation, substrate temperature and other parameters. Effects of microstructure and conductivity of grain boundaries will also be investigated to develop better understanding of the AlGaN cold cathode technology. The commerical potential for this technology is a compact addressable X-ray source. Additional applications will include electronic coolers, electron guns, solar-blind UV detectors, large-area lighting and flat-panel displays.