SGER: Design, growth, and characterization of quantum-well dots

University Of Arkansas, Fayetteville AR

Investigators

Abstract

PI and CO-PI propose to design, grow, and characterize quantum-well dots. They propose to grow this novel structure by growing InP stressors on the top of barrier GaAs surface by molecular-beam epitaxy. The InP stressors modulate the quantum-well band-gap with local strain generating confinement potential. InP islands are formed due to a strain-induced 2D-3D transition, taking place, because of lattice misfit between the GaAs barrier and InP layer. They will characterize the structure by photoluminescence, excitation spectum, and time-resolved pump-probe technique. They will optimize the structure following his experimental results. Since this is an untested and novel idea, a SGER grant is appropriate and crucial for them to obtain preliminary results on the quantum-well dots, and therefore to compete for NSF funding in the future. These properly-designed quantum-well and double-quantum-barrier dots have applications in efficient THz emission and detection.