Surface Nucleation and Growth of Silicides

Arizona State University, Scottsdale AZ

Investigators

Abstract

This project addresses atomic level nucleation and epitaxy of silicides with emphasis on Co and Ti/Si(100). The nucleation and growth of silicide surface structures in the early stages of overlayer/interface formation on silicon will be characterized using scanning tunneling microscopy (STM), low energy electron microscopy (LEEM) and surface X-ray diffraction (SXRD). The aim is to quantify the fundamental parameters that affect overlayer growth including surface diffusion, binding energies to steps and islands and interlayer transport. STM will be used to measure island nucleation density over a wide range of temperature and flux, with the aim to link atomic scale behavior at low temperature and flux with macroscopic behavior at higher temperatures and flux closer to practical growth conditions via modeling with the classical nucleation theory. Multilayer growth and associated interface roughness and island coarsening will be monitored in real time using LEEM and SXRD. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. These studies will improve the fundamental understanding of metal/silicon surface reactions, which are key to several issues in silicon-based microelectronics, including shallow junction contacts and nanoscale interconnects. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***